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    • 专利摘要:
    The invention relates to a method for manufacturing an LED emitting display device, comprising the following steps: a) producing a plurality of chips (200) each comprising at least one LED (110), and on one side of connection, a plurality of hydrophilic electrical connection pads (125, 126, 127, 128) and a hydrophobic zone (202); b) providing a transfer substrate (250) comprising, for each chip, a plurality of hydrophilic electrical connection pads (155, 156, 157, 158) and a hydrophobic zone (252); c) disposing a drop of a liquid (260) on each electrical connection pad of the transfer substrate and / or each chip; and d) attaching the chips to the transfer substrate by direct bonding, using the drop capillary return force to align the electrical connection pads of the chips to the electrical connection pads of the transfer substrate.
    公开号:FR3065321A1
    申请号:FR1753279
    申请日:2017-04-14
    公开日:2018-10-19
    发明作者:Ivan-Christophe Robin；Jean Berthier；Severine Cheramy；Lea Di Cioccio
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    Holder (s): COMMISSIONER OF ATOMIC ENERGY AND ALTERNATIVE ENERGIES Public establishment.
    Extension request (s)
    Agent (s): CABINET BEAUMONT.
    (54) METHOD FOR MANUFACTURING AN EMISSIBLE LED DISPLAY DEVICE.
    FR 3 065 321 - A1 (57) The invention relates to a method of manufacturing an emissive LED display device, comprising the following steps:
    a) producing a plurality of chips (200) each comprising at least one LED (110), and, on a connection face, a plurality of hydrophilic electrical connection pads (125, 126, 127, 128) and a hydrophobic zone ( 202);
    b) producing a transfer substrate (250) comprising, for each chip, a plurality of hydrophilic electrical connection pads (155, 156, 157, 158) and a hydrophobic zone (252);
    c) placing a drop of a liquid (260) on each electrical connection pad of the transfer substrate and / or of each chip; and
    d) fix the chips to the transfer substrate by direct bonding, using the capillary restoring force of the drops to align the electrical connection pads of the chips with the electrical connection pads of the transfer substrate.

    B15812 - DD17787
    METHOD FOR MANUFACTURING AN EMISSIBLE LED DISPLAY DEVICE
    Field
    The present application relates to the production of an emissive image display device with light-emitting diodes (LED), for example a television screen, computer screen, smartphone, digital tablet, etc.
    Presentation of the prior art
    It has already been proposed, in French patent application No. 1561421 filed on November 26, 2015, a method of manufacturing an image display device comprising a plurality of elementary electronic microchips arranged in a matrix on the same substrate of postponement. According to this process, the microchips and the transfer substrate are produced separately. Each microchip includes a stack of an LED and an LED driver. The control circuit includes a connection face opposite the LED, comprising a plurality of electrical connection pads intended to be connected to the transfer substrate for controlling the microchip. The transfer substrate comprises a connection face comprising, for each microchip, a plurality of electrical connection pads intended to be connected respectively to the electrical connection pads of the microchip. The chips are then attached to the transfer substrate, connection faces facing the connection face of the substrate.
    B15812 - DD17787 transfer, and fixed on the transfer substrate so as to connect the electrical connection pads of each microchip to the corresponding electrical connection pads of the transfer substrate.
    It would be desirable to be able to at least partially improve certain aspects of this process.
    In particular, due to the relatively small dimensions of the microchips, and since each microchip comprises several distinct electrical connection pads, the alignment of the electrical connection pads of the microchips with the corresponding electrical connection pads of the transfer substrate is relatively difficult to achieve. It would be desirable to be able to facilitate the implementation of this alignment and / or improve the alignment accuracy obtained. summary
    Thus, one embodiment provides a method of manufacturing an emissive LED display device, comprising the following steps:
    a) making a plurality of chips each comprising at least one LED, and, on a connection face of the chip, a plurality of hydrophilic electrical connection pads and a hydrophobic zone, each electrical connection pad of the chip being surrounded and separated other electrical connection areas of the chip through the hydrophobic zone;
    b) producing a transfer substrate comprising, for each chip, on a connection face of the transfer substrate, a plurality of hydrophilic electrical connection pads intended to be connected respectively to the electrical connection pads of the chip, and a hydrophobic zone, each electrical connection area of the transfer substrate being surrounded and separated from the other electrical connection areas of the transfer substrate by the hydrophobic zone;
    c) placing a drop of a liquid on each electrical connection area of the transfer substrate and / or on each electrical connection area of each chip; and
    B15812 - DD17787
    d) fix the chips on the transfer substrate by direct bonding so as to electrically connect the electrical connection pads of each chip to the corresponding electrical connection pads of the transfer substrate, using the capillary return force of the drops to align the electrical connection pads of the chips on the corresponding electrical connection pads of the transfer substrate.
    According to one embodiment, the electrical connection pads of the chips and of the transfer substrate are made of metal, and the hydrophobic zones of the chips and of the transfer substrate are made of a hydrophobic polymer.
    According to one embodiment, the electrical connection pads of the chips are made of a material forming a drop angle of less than 10 ° with the liquid, and the hydrophobic zones are made of a material forming a drop angle of more than 20 ° with the liquid .
    According to one embodiment:
    in each chip, the connection face of the chip is planar, that is to say that the electrical connection areas of the chip are flush with the external face of the hydrophobic zone; and / or the connection face of the transfer substrate is planar, that is to say that the electrical connection pads of the transfer substrate are flush with the external face of the hydrophobic zone.
    According to one embodiment:
    in each chip, the electrical connection areas of the chip form protrusions projecting from the connection face of the chip; and / or the electrical connection pads of the transfer substrate form protrusions projecting from the connection face of the transfer substrate.
    According to one embodiment:
    B15812 - DD17787 at the end of step a), the chips are placed on a support substrate with an inter-chip pitch less than the inter-chip pitch of the final display device; and in step d), several chips are selectively detached from the support substrate at the pitch of the final display device and fixed to the transfer substrate at this same pitch.
    According to one embodiment, the selective detachment of the chips is carried out by means of a localized laser beam projected from the face of the support substrate opposite the chips.
    According to one embodiment, the support substrate has one or more through openings facing each chip, the selective detachment of the chips being carried out by means of these openings.
    According to one embodiment:
    at the end of step a), the chips are only placed, without gluing, on the support substrate; and in step d) the transfer substrate is brought above the chips, connection side facing the connection faces of the chips, and placed on the chips so as to simultaneously take several chips at the pitch of the display device final.
    According to one embodiment, the support substrate comprises cavities in which the chips are arranged so that the chips are held laterally by the walls of the cavities.
    According to one embodiment, the bottom of each cavity of the support substrate is non-planar.
    According to one embodiment, each chip comprises a stack of an LED and an active LED control circuit.
    Another embodiment provides an emissive LED display device produced by a method as defined above.
    Brief description of the drawings
    These and other features and advantages will be discussed in detail in the following description of modes of
    B15812 - DD17787 particular embodiment made without implied limitation in relation to the attached figures among which:
    Figure 1 is a sectional view schematically and partially illustrating a step of transferring a microchip onto a transfer substrate, according to an example of a method of manufacturing an emissive LED display device;
    Figure 2 is a sectional view schematically and partially illustrating a step of transferring a microchip onto a transfer substrate, according to an example of an embodiment of a method of manufacturing a display device emissive LED;
    Figure 3 is a sectional view schematically and partially illustrating a step of transferring a microchip onto a transfer substrate, according to another example of an embodiment of a method of manufacturing a device emissive LED display;
    FIGS. 4A, 4B and 4C are sectional views illustrating steps of an example of an embodiment of a method of manufacturing an emissive LED display device;
    Figure 5 is a sectional view illustrating an alternative embodiment of the method of Figures 4A to 4C;
    FIGS. 6A, 6B, 6C and 6D are sectional views illustrating steps of another example of an embodiment of a method of manufacturing an emissive LED display device;
    FIGS. 7A, 7B, 7C and 7D are sectional views illustrating steps of another example of an embodiment of a method of manufacturing an emissive LED display device; and Figure 8 is a sectional view illustrating an alternative embodiment of the method of Figures 7A to 7D.
    detailed description
    The same elements have been designated by the same references in the different figures and, moreover, the various figures are not drawn to scale. For the sake of clarity,
    B15812 - DD17787 only the elements useful for understanding the described embodiments have been represented and are detailed. In particular, the manufacture of the elementary microchips and of the transfer substrate of the display devices described has not been detailed, the manufacture of these elements being within the reach of those skilled in the art from the teachings of the present description. By way of example, the elementary microchips and the transfer substrate can be manufactured according to methods identical or similar to those described in the French patent application No. 1561421 mentioned above, the content of which is considered to be an integral part of the present description. and is here incorporated by reference to the extent permitted by law. In the following description, when referring to qualifiers of absolute position, such as the terms forward, backward, up, down, left, right, etc., or relative, such as the terms above, below, top , lower, etc., or to orientation qualifiers, such as the terms horizontal, vertical, etc., reference is made to the orientation of the figures, it being understood that, in practice, the devices described can be oriented differently. Unless specified otherwise, the expressions approximately, appreciably, and of the order of mean to the nearest 10%, preferably to the nearest 5%.
    Figure 1 is a sectional view schematically and partially illustrating a step of transferring a microchip 100 onto a transfer substrate 150, according to an example of a method of manufacturing an emissive LED display device.
    FIG. 1 represents more particularly the microchip 100 and the transfer substrate 150 before the actual step of fixing the microchip on the transfer substrate.
    In practice, a display device can comprise a plurality of identical or similar elementary chips 100 mounted on the same transfer substrate in a matrix arrangement according to rows and columns, the chips being
    B15812 - DD17787 connected to electrical connection elements of the substrate for their control, and each microchip corresponding for example to a pixel of the display device.
    The microchip 100 comprises, in an upper portion, an inorganic semiconductor LED 110, and, in a lower portion integral with the upper portion, an active control circuit 120 based on monocrystalline silicon, adapted to control the emission of light by the LED.
    LED 110 comprises at least one homojunction or heterojunction, for example a PN junction formed by a stack of an upper semiconductor layer of type N 112 and of a lower semiconductor layer of type P 114, and two electrical contacts 116 and 118 (respectively in contact with layer 112 and with layer 114 in the example shown) for injecting an electric current through the stack, in order to produce light. By way of example, LED 110 is an LED with gallium nitride or based on any other III-V semiconductor suitable for producing an LED.
    The control circuit 120 is produced in and on a block of monocrystalline silicon 121, and comprises electronic components, and in particular one or more transistors and at least one capacitive element for maintaining a polarization signal, for the individual control of the LED 110. The upper face of the control circuit 120 is in mechanical and electrical contact with the LED 110. The lower face of the circuit 120, defining a connection face of the microchip, comprises a plurality of electrical connection pads intended to be connected to corresponding electrical connection pads of the transfer substrate 150 for controlling the microchip. In the example shown, the lower face of the circuit 120 comprises four electrical connection pads 125, 126, 127 and 128. The pads 125 and 12 6 are intended to receive respectively a low supply potential (for example the ground) Vn and a high supply potential (that is to say greater than the low supply potential) Vp of the microchip. The beaches 127
    B15812 - DD17787 and 128 are intended to receive microchip control signals. More particularly, the range 127 is intended to receive a signal Vsel for selecting the microchip, and the range 128 is intended to receive a signal Vdata for adjusting the brightness level of the microchip. The connection pads 125, 126, 127 and 128 are for example made of metal, for example copper. In this example, the control circuit 120 comprises two MOS transistors 122 and 123 and a capacitive element 124, for example a capacitor. The transistor 122, for example a P channel transistor, has a first conduction node (source or drain) connected to the connection pad 126 (Vp) of the microchip, a second conduction node (drain or source) connected to the anode contact terminal 118 of LED 110, and a control node (grid) connected to an intermediate node al of the circuit 120. The capacitive element 124 has a first electrode connected to the node al and a second electrode connected to the connection area 126 (Vp) of the microchip. The transistor 123, for example an N-channel transistor has a first conduction node connected to the connection pad 128 (Vdata) of the microchip, a second conduction node connected to the node al, and a control node connected to the pad connection point 127 (Vsel) of the microchip. The microchip 100 further comprises an insulated conductor via 129 connecting the electrical connection pad 125 (Vn) of the microchip to the cathode contact terminal 116 of the LED 110.
    The operation of the elementary microchip 100 during a phase for updating the pixel brightness level is as follows. The transistor 123 is closed (turned on) by the application of a suitable control signal on the terminal 127 (Vsel). The capacitive element 124 is then charged at a voltage level which is a function of the adjustment signal applied to the terminal 126 (Vdata) of the microchip. The level of the adjustment signal Vdata fixes the potential of the node al, and consequently the intensity of the current injected into the LED by the transistor 122, and therefore the light intensity emitted by the LED. The transistor 123 can then be reopened. The node al then remains at a substantially equal potential
    B15812 - DD17787 with Vdata potential. Thus, the current injected into the LED remains substantially constant after the reopening of the transistor 123, and this until the next update of the potential of the node al.
    The transfer substrate 150 comprises for example a plate or a support sheet 151 made of an insulating material, on which are arranged electrical connection elements, for example conductive tracks and pads. The transfer substrate 150 is for example a passive substrate, that is to say that it comprises only electrical connection elements for supplying the control and power supply signals of the microchips. The transfer substrate 150 comprises a connection face, its upper face in the example shown, intended to receive the microchips 100. For each microchip of the display device, the transfer substrate 150 comprises, on its connection face, a plurality of electrical connection pads (one per electrical connection pad of the microchip) intended to be connected respectively to the electrical connection pads of the microchip. Thus, in this example, for each microchip 100 of the display device, the transfer substrate 150 comprises four electrical connection pads 155, 156, 157 and 158 intended to be connected respectively to the electrical connection pads 125, 126, 127 and 128 of the microchip 100, for supplying the control signals Vn, Vp, Vsel and Vdata of the microchip. The electrical connection pads 155, 156, 157 and 158 of the transfer substrate are for example of the same conductive material as the electrical connection pads 125, 126, 127 and 128 of the microchips, for example copper.
    When the microchip 100 is transferred onto the transfer substrate 150, the connection face of the microchip is brought into contact with the connection face of the transfer substrate so as to electrically connect the electrical connection pads 125, 126, 127 and 128 of the microchip respectively to the corresponding electrical connection pads 155, 156, 157 and 158 of the transfer substrate. The microchip 100 is fixed to the transfer substrate by direct bonding, that is to say without
    B15812 - DD17787 supply of adhesive material or solder at the interface between the microchip and the substrate, for example at room temperature and pressure. For this, the electrical connection pads of the microchip and of the transfer substrate may have been prepared beforehand to obtain sufficient flatness, for example a roughness less than 1 nm, to achieve direct bonding of the pads 125, respectively 126, respectively. 127, respectively 128, on tracks 155, respectively 156, respectively 157, respectively 158. Annealing may optionally be provided after bonding, for example at a temperature between 150 and 250 ° C., to increase the strength of the bonding.
    As indicated above, a difficulty of such a method lies in the alignment of the electrical connection pads of the microchip on the corresponding electrical connection pads of the transfer substrate in order to obtain a good electrical connection between the microchip and the transfer substrate.
    Indeed, the microchips have for example, in top view, a maximum dimension less than or equal to 100 μm, for example less than or equal to 50 μm, for example of the order of 10 μm. Each microchip comprising several electrical connection areas (four in the example in FIG. 1), the alignment of the microchips must be very precise, for example precise to better than 1 μm.
    FIG. 2 is a sectional view schematically and partially illustrating a step of transferring a microchip 200 onto a transfer substrate 250, according to an example of an embodiment of a method for manufacturing a device d emissive LED display. FIG. 2 shows more particularly the microchip 200 and the transfer substrate 250 before the actual step of fixing the microchip on the transfer substrate.
    The microchip 200 and the transfer substrate 250 of FIG. 2 comprise elements common to the microchip 100 and the transfer substrate 150 of FIG. 1. In the following, only
    B15812 - DD17787 the differences between the embodiment of figure 2 and the example of figure 1 will be detailed.
    The microchip 200 of FIG. 2 differs from the microchip 100 of FIG. 1 mainly in that it comprises, on the side of its connection face, a hydrophobic layer 202 of an electrically insulating material, laterally surrounding the electrical connection pads 125 , 126, 127 and 128 of the microchip. In the example shown, the hydrophobic layer 202 extends over substantially the entire lower surface of the microchip not occupied by the electrical connection pads 125, 126, 127 and 128. By way of example, in front view, each electrical connection pads 125, 126, 127 and 128 of the microchip is entirely surrounded by the hydrophobic layer 202 and separated from the other electrical connection pads by the hydrophobic layer 202. The electrical connection pads 125, 126, 127 and 128 are as for them intended to be hydrophilic.
    Thus, in the example of FIG. 2, the connection face of the microchip comprises a plurality of hydrophilic zones, corresponding to the electrical connection pads 125, 126, 127 and 128, each surrounded laterally and separated from the other hydrophilic zones by a hydrophobic zone (layer 202).
    In the example of FIG. 2, the lower face or connection face of the microchip 200 is substantially plane, that is to say that the electrical connection areas 125, 126, 127 and 128 of the microchip are flush with the level of the underside of the hydrophobic layer 202. By way of example, the electrical connection pads 125, 126, 127 and 128 are formed according to a damascene type method, comprising a step of depositing the hydrophobic layer over the entire surface bottom of the microchip, followed by a step of etching cavities intended to receive the electrical connection pads 125, 126, 127 and 128 on the side of the bottom face of the microchip, followed by a step of filling the cavities with a conductive material to form the electrical connection pads, followed by a mechanochemical polishing step to planarize the lower surface of the chip
    B15812 - DD17787 so as to level the lower faces of the electrical connection pads 125, 126, 127 and 128 and the lower face of the hydrophobic layer 202.
    By the terms hydrophobic and hydrophilic, it is meant here that the material of the layer 202 has a relatively low wettability and that the material of the electrical connection pads has a relatively high wettability.
    Generally, the wettability of a material can be characterized by the contact angle of a drop of liquid on a horizontal surface of the material at atmospheric pressure, that is to say the angle between the tangent to the drop and the surface of the material at the triple solid / liquid / gas contact point. The smaller the contact angle, the higher the wettability of the material.
    We are seeking here to obtain a high wettability difference between the hydrophobic zone and the hydrophilic zones of the connection face of the microchip, so as to allow the confinement of a drop of a liquid electrical connection of the microchip, the alignment electrical connection pads of the microchip on the corresponding electrical connection pads of the transfer substrate as will be described in more detail below.
    By way of example, the term hydrophilic means that the contact angle of a drop of water on the material of the electrical connection pads 125, 126, 127 and 128 is less than 10 °, and preferably less than 5 °, and hydrophobic means that the contact angle of a drop of water on the material of layer 202 is greater than 20 °, preferably greater than 60 °, preferably greater than 90 °. In the example of FIG. 2, the difference in drop angle between the hydrophilic material and the hydrophobic material is preferably greater than 90 °, for example greater than 110 °.
    The hydrophobic layer 202 is for example made of a hydrophobic polymer, for example the Bosch C4F8 polymer, polytetrafluoroethylene (TEFLON), a non-stick polymer of the type on each range in order to facilitate
    B15812 - DD17787 marketed by the company Daikin under the commercial reference OPTOOL DSX, or in any other suitable hydrophobic material.
    Similarly, the transfer substrate 250 of FIG. 2 differs from the transfer substrate 150 of FIG. 1 mainly in that it comprises, on the side of its connection face, a hydrophobic layer 252 of an electrically insulating material, surrounding laterally the electrical connection areas
    155, 156, 157 and 158 of the substrate. In the example shown, the hydrophobic layer 252 extends over substantially the entire upper surface of the transfer substrate not occupied by the electrical connection pads 155, 156, 157 and 158. By way of example, in front view, each of the electrical connection pads 155, 156, 157 and 158 of the transfer substrate is entirely surrounded by the hydrophobic layer 252 and separated from the other electrical connection pads by the hydrophobic layer 252. The electrical connection pads 155, 156, 157 and 158 are intended to be hydrophilic.
    In the example of FIG. 2, the upper face or connection face of the transfer substrate 250 is substantially planar, that is to say that the electrical connection pads 155,
    156, 157 and 158 of the transfer substrate are exposed at the level of the upper face of the hydrophobic layer 252. By way of example, the electrical connection pads 155, 156, 157 and 158 are formed according to a damascene type process after the deposition of the hydrophobic layer over the entire upper surface of the transfer substrate.
    As with the microchip, the aim here is to obtain a high wettability difference between the hydrophobic zone and the hydrophilic zones of the connection face of the transfer substrate, so as to allow the confinement of a drop of a liquid on each range. of electrical connection of the transfer substrate, in order to facilitate alignment of the electrical connection pads of the microchip on the corresponding electrical connection pads of the transfer substrate.
    B15812 - DD17787
    By way of example, the contact angle of a drop of water on the material of the electrical connection pads 155, 156, 157 and 158 is less than 10 °, and preferably less than 5 °, and the contact angle of a drop of water on the material of layer 252 is greater than 20 °, preferably greater than 60 °, preferably greater than 90 °. The difference in drop angle between the material of the electrical connection pads 155, 156, 157 and 158 and the material of the layer 252 is preferably greater than 90 °, for example greater than 110 °.
    For example, the electrical connection pads 155, 156, 157 and 158 of the transfer substrate 250 are made of the same material as the electrical connection pads 125, 126, 127 and 128 of the microchip 200, and the hydrophobic layer. 252 of the transfer substrate 250 is made of the same material as the hydrophobic layer 202 of the microchip 200.
    In the example of FIG. 2, provision is made, before the actual transfer of the microchip 200 to the transfer substrate 250, to have a drop of a liquid 260, for example water, on each connection pad of the transfer substrate and / or on each electrical connection area of the microchip.
    In the example shown, the drops are arranged only on the electrical connection pads of the transfer substrate. For this, the upper face of the transfer substrate is for example immersed in a bath of the liquid 260. Alternatively, the liquid 260 can be sprayed on the upper face of the transfer substrate. Due to the hydrophilic / hydrophobic contrast between the electrical connection pads 155, 156, 157, 158 of the substrate and the hydrophobic layer 252, drops of the liquid 260 are confined only on the electrical connection pads 155, 156, 157, 158, of the transfer substrate, that is to say four drops per microchip in the example of FIG. 2.
    The microchip 200 is then attached to the substrate 250, connection side facing the connection side of the substrate 250. More particularly, the connection pads
    B15812 - DD17787 electrical 125, 126, 127 and 128 of the microchip are placed on the drops of the liquid 260 surmounting the corresponding electrical connection pads 155, 156, 157 and 158 of the transfer substrate.
    During this step, the capillary return force exerted by the drops of liquid 260 on the hydrophilic surfaces, that is to say on the electrical connection pads, makes it possible to precisely align the electrical connection pads of the microchip on the corresponding electrical connection pads of the transfer substrate.
    It will be noted that the capillary return force exerted by each microdrop is proportional to the length of the periphery of the drop, or length of the line of triple air / solid / liquid contact of the microdrop. Thus, the fact of providing one drop per electrical connection area of the microchip makes it possible to benefit from a higher alignment restoring force than if a single drop was provided for the alignment of the microchip.
    Once the microchip 200 has been aligned on the transfer substrate with the assistance of drops of liquid 260, the microchip 200 is fixed on the transfer substrate 250 by direct bonding of the electrical connection pads 125, 126, 127 and 128 of the microchip on the corresponding electrical connection pads 155, 156, 157 and 18 of the transfer substrate. For this, a pressure can for example be applied to the microchip 200 to evacuate the drops of the liquid 260, or the liquid 260 can be evaporated, so as to bring the connection face of the microchip into contact with the connection face of the substrate transfer, and thus obtain direct bonding of the electrical connection pads 125, 126, 127 and 128 of the microchip on the electrical connection pads 155, 156, 157 and 158 of the transfer substrate. The electrical connection areas of the microchip and of the transfer substrate may have been previously prepared to obtain a flatness sufficient to carry out direct bonding. Annealing may possibly be provided after bonding, for example at
    B15812 - DD17787 a temperature between 150 and 250 ° C, to increase the bonding energy.
    Figure 3 is a sectional view schematically and partially illustrating a transfer step of a microchip 300 on a transfer substrate 350, according to an example of an embodiment of a method of manufacturing a device d emissive LED display.
    FIG. 3 represents more particularly the microchip 300 and the transfer substrate 350 before the actual step of fixing the microchip on the transfer substrate.
    The microchip 300 in FIG. 3 comprises elements common with the microchip 200 in FIG. 2, and the transfer substrate 350 in FIG. 3 comprises elements common with the transfer substrate 250 in FIG. 2.
    In the following, only the differences between the embodiment of Figure 3 and the embodiment of Figure 2 will be detailed.
    The microchip 300 in FIG. 3 differs from the microchip 200 in FIG. 2 mainly in that, in the microchip 300, the electrical connection pads 125, 126, 127 and 128 form protrusions projecting from the underside of the chip . Thus, unlike the microchip 200, the connection face of which is substantially planar, the microchip 300 has a structured connection face. More particularly, the protrusions formed by the electrical connection pads of the microchip have a mesa or plateau shape, the upper face of each protuberance forming a sharp edge with the sides of the protuberance.
    Similarly, the transfer substrate 350 of FIG. 3 differs from the transfer substrate 250 of FIG. 2 mainly in that, in the transfer substrate 350, the electrical connection pads 155, 156, 157 and 158 form protuberances. projecting from the upper face of the substrate. Thus, unlike the transfer substrate 250 whose connection face
    B15812 - DD17787 is substantially planar, the transfer substrate 350 has a structured connection face. More particularly, the protrusions formed by the electrical connection pads of the transfer substrate have a mesa or plateau shape, the upper face of each protuberance forming a sharp edge with the sides of the protuberance.
    An advantage of the variant of FIG. 3 is that it makes it possible to benefit, in addition to the difference in wettability between the electrical connection pads and the hydrophobic zone surrounding the electrical connection pads, from an effect of anchoring of the drops. liquid 260 on the top of each protuberance to keep the drops confined to the electrical connection areas.
    As a variant, only the electrical connection pads of the transfer substrate form protuberances, the connection face of the microchip being substantially planar as described in the example of FIG. 2. In another variant, only the pads of electrical connection of the microchip form protuberances, the connection face of the transfer substrate being substantially planar as described in the example of FIG. 2.
    Figures 4A, 4B and 4C are sectional views illustrating steps of an example of an embodiment of a method of manufacturing an emissive LED display device.
    FIG. 4A illustrates a step during which, after having formed the microchips 200 separately on a support substrate 401, and the transfer substrate 250, and after having arranged drops of the liquid 260 on the electrical connection pads of the substrate transfer 250, the microchips 200 are positioned approximately facing the corresponding transfer zones of the substrate 250, connection faces of the microchips facing the connection face of the substrate 250, using the support substrate 401 as a handle .
    B15812 - DD17787
    By way of example, the method for manufacturing microchips 200 is a method of the type described in the French patent application No. 1561421 mentioned above, comprising:
    forming a matrix of elementary control circuits 120 identical or similar, in and on a silicon substrate;
    the separate formation, on a suitable growth substrate, for example of sapphire, of a corresponding matrix of identical or similar elementary LEDs 110;
    the transfer, one over the other, of the matrix of control circuits 120 and of the matrix of LEDs 110, the two matrices being secured to one another, for example by heterogeneous direct bonding;
    removing the LED growth substrate and replacing it with a support substrate, corresponding to the substrate 401 in FIG. 4A, fixed by a so-called temporary bonding, having a lower adhesion energy than the initial bond between the microchips and the LED growth substrate, so as to facilitate a subsequent step of microchip sampling; and the individualization of each microchip 200 by engraving around it a trench extending vertically from the connection face of the microchip to the substrate 401, so as to obtain a matrix of individual microchips attached to the support substrate 401 by their LEDs, as shown in FIG. 4A.
    Alternatively, the step of replacing the LED growth substrate with a different support substrate can be omitted, in which case the substrate 401 in Figure 4A is the LED growth substrate. In this case, the connection between the substrate 401 and the LEDs 110 may possibly be weakened, by means of a laser beam projected through the substrate 401 from its rear face, that is to say its face opposite to the microchips 200 .
    In another variant, the stacking of the semiconductor layers constituting the LEDs can be added to the
    B15812 - DD17787 matrix of elementary control circuits individualization of elementary LEDs 110. The
    120 before substrate to allow support 401 circuits of
    LED growth is then removed for the individualization of LED 110, then the substrate can be glued to the face of LED 110 opposite the control 120.
    For the sake of simplification, there is shown in FIGS. 4A to 4C, as well as in the following figures, a single electrical connection area per microchip. In practice, as indicated above, each microchip comprises several electrical connection areas on its connection face. In addition, still for the sake of simplification of the figures, the microchips 200 have not been detailed in FIGS. 4A to 4C and following. Only the hydrophobic layer 202 and the single electrical connection area (hatched surface, not referenced) are visible. Similarly, the transfer substrate 250 has not been detailed in FIGS. 4A to 4C and following. Only the hydrophobic layer 252 and, for each microchip, a single electrical connection range (hatched surface, not referenced) are visible.
    The microchips 200 attached to the support substrate 401 by their LEDs are brought opposite to corresponding reception areas of the transfer substrate 250, connection faces facing the connection face of the substrate 250, and placed on the drops of the liquid 260 surmounting the electrical connection areas of the transfer substrate.
    During this step, the capillary return force exerted by the drops of liquid 260 on the hydrophilic electrical connection pads makes it possible to precisely align the electrical connection pads of each microchip with the corresponding electrical connection pads of the transfer substrate.
    It will be noted that the fact of simultaneously bringing several microchips 200 onto the substrate 250 makes it possible to benefit from a higher capillary return force than if a single chip was added, insofar as the return forces of
    B15812 - DD17787 capillarity exerted by the drops associated with the various deferred microchips add up.
    The microchips 200 are then fixed on the transfer substrate 250 by direct bonding of the electrical connection pads of the microchips on the corresponding electrical connection pads of the transfer substrate. For this, a pressure can for example be applied to the microchips 200 to evacuate the drops of the liquid 260, or the liquid 260 can be evaporated, so as to obtain a direct bonding between the microchips and the transfer substrate.
    The microchips 200 are then detached from the support substrate 401, and the latter is removed.
    In practice, the pitch P40I of the microchips on the substrate 401, for example of the order of 10 to 50 μm, can be less than the pitch P250 of the final device after transfer to the substrate 250, for example between 15 μm and 1 mm , for example of the order of 100 to 500 pm.
    In the example described in relation to FIGS. 4A to 4C, as well as in the examples of the following figures, the pitch P250 of the microchips 200 on the transfer substrate 250 is a multiple of the pitch P40I of the microchips on the support substrate 401. Thus, provision is made to transfer only part of the microchips 200 of the substrate 401 onto the substrate 250, in step with the transfer substrate 250 (i.e. a chip on n with η = Ρ25θ / Ρ4θΐ) 'then, if necessary, to shift the substrate 401 with the remaining microchips for transferring another part of the microchips 200 from the substrate 401 to the substrate 250, and so on until all the microchips of the display device have been fixed on the transfer substrate 250.
    At each iteration, once the alignment of the microchips 200 on the transfer substrate carried out with the assistance of drops of liquid 260 (FIG. 4B), the microchips 200 are selectively detached from the support substrate 401. The support substrate 401 and the remaining microchips 200 are then removed as illustrated in Figure 4C.
    B15812 - DD17787
    To selectively detach the microchips 200 from the support substrate 401, a slight bonding can be provided between the support substrate 401 and the microchips 200, so that only the microchips 200 aligned with corresponding connection pads of the transfer substrate 250 are torn off during the withdrawal of the support substrate 401, under the effect of the capillary force exerted by the drops of the liquid 266 or under the effect of the direct bonding force between the microchip and the transfer substrate. For example, the microchips 200 are bonded to the support substrate 401 using a polymer of the C4F8, TEFLON, or OPTOOL DSX type, or by any other adhesive making it possible to obtain bonding energy between the microchips. 200 and the support substrate 401 less than the adhesion energy between the microchips 200 and the transfer substrate 250.
    As a variant, in the case where the support substrate 401 is transparent, the bonding of the microchips 200 to the support substrate 401 can be carried out by a resin adapted to be degraded by ultraviolet radiation, for example a resin of the BREWER 305 type. Localized laser exposure of the resin can then be carried out through the substrate 401, to selectively detach part of the microchips 200.
    In the case where the support substrate 401 is the growth substrate for the LEDs 110, the latter may have a relatively strong adhesion with the microchips 200. In this case, it is possible to use a method of selective detachment by means of a laser beam. localized projected through the substrate 401, for example a method of the type described in patent application US6071795. For example, in the case of a sapphire growth substrate 401 and of gallium nitride LEDs, a laser at 458 nm can be used, with an optical power of between 10 mW / mm ^ and 10 W / mm ^, and an exposure time of between 1 second and 1 minute for each chip to be peeled off. After exposure to the laser, liquid gallium is present at the interface between the LED and the sapphire. The microchip then holds by capillarity on the substrate 401, until it is transferred to the substrate 250.
    B15812 - DD17787
    It will be noted that in order to increase the bonding force between the microchips 200 and the transfer substrate 250, and thus facilitate the detachment of the support substrate 401, it is possible to carry out, before the withdrawal of the substrate 401 (FIG. 4C), annealing aimed at increase the bonding energy between the microchips and the transfer substrate, for example at a temperature between 150 and 250 ° C.
    Figure 5 is a sectional view illustrating an alternative embodiment of the method of Figures 4A to 4C.
    The method of FIG. 5 differs from the method of FIGS. 4A to 4C mainly in that, in the method of FIG. 5, the support substrate 401 of FIGS. 4A to 4C is replaced by a support substrate 501, comprising at least one through opening 503 opposite each microchip 200. The prediction of the through openings 503 makes it possible to facilitate the selective detachment of the microchips 200 when they are transferred to the substrate 250. For example, the microchips 200 are kept glued to the substrate 501 by an adhesive, and a stream of compressed air is injected locally into the openings 503 located opposite the microchips to be detached, to obtain their detachment. Alternatively, micro needles can be used to selectively push the microchips to be detached through the corresponding openings 503. As a variant, the microchips are kept glued to the substrate 501 by aspiration through the openings 503, then the aspiration is interrupted in a localized manner opposite the microchips to be detached, to obtain their detachment.
    FIGS. 6A to 6D are sectional views illustrating steps of another example of an embodiment of a method of manufacturing an emissive LED display device.
    FIG. 6A illustrates a step during which, after having formed the microchips 200 on a first support substrate 401 in an identical or similar manner to what has been described previously in relation to FIG. 4A, the microchips 200 are transferred from the substrate 401 on a second substrate of
    B15812 - DD17787 support 601, without change of pitch. For this, the microchips 200 are arranged on the substrate 601 by using the substrate 401 as a handle. The microchips 200 are brought into contact, by their connection faces, that is to say their faces opposite to the LEDs 110, with one face of the substrate 601. A temporary bonding using an adhesive layer can be provided between the connection face of the microchips and the substrate 601. As a variant, the microchips 601 are simply placed on the upper face of the substrate 601. The initial support substrate 401 is then removed.
    FIG. 6B illustrates a step subsequent to the withdrawal of the initial support substrate 401, during which the microchips 200 are transferred from the second support substrate 601 to the upper face of a third support substrate 603, still retaining the initial pitch . In the case where the microchips 200 are bonded to the temporary support substrate 601 by an adhesive layer, the microchips can be transferred to the upper face of the substrate 603 by using the substrate 601 as a handle. In the case where the microchips 200 are simply placed on the upper face of the temporary support substrate 601, the substrate 603 can be placed on the upper face of the microchips 200, that is to say on the LED side 110, then the assembly comprising the substrate 601, the microchips 200 and the substrate 603 is turned over so that the microchips 200 are found on the upper face side of the substrate 603. The temporary support substrate 601 is then removed.
    FIG. 6C illustrates a step subsequent to the withdrawal of the substrate 601. At this stage, the microchips 200 are simply placed (and not glued) on the upper face of the support substrate 603, the connection faces of the microchips being turned upwards, that is to say opposite of the substrate 603.
    The transfer substrate 250 on which it is desired to fix microchips 200, is then positioned above the substrate 603 and microchips 200, connection face facing the connection faces of the microchips. Beforehand, drops of
    B15812 - DD17787 liquid 260 have been placed on the electrical connection areas of the transfer substrate 250. The microchips 200, placed on the support substrate 603, are brought opposite the corresponding reception areas of the transfer substrate 250 , then the electrical connection pads of the microchips 200 are brought into contact with the drops of the liquid 260 placed on the corresponding electrical connection pads of the transfer substrate.
    The capillary return force exerted by the drops of the liquid 260 on the hydrophilic electrical connection pads attracts the microchips 200 (which are free to move relative to the substrate 603 due to the absence of bonding between the microchips and the substrate) , and leads to precise self-alignment of the connection pads of each microchip on the corresponding electrical connection pads of the transfer substrate.
    The microchips 200 are then fixed on the transfer substrate 250 by direct bonding. For this, a pressure can for example be applied to the microchips 200 to evacuate the drops of the liquid 260, or the liquid 260 can be evaporated, so as to obtain a direct bonding between the microchips and the transfer substrate.
    The support substrate 603 and the remaining microchips 200 can be removed as shown in Figure 6D.
    Figures 7A to 7D are sectional views illustrating steps of another example of an embodiment of a method of manufacturing an emissive LED display device.
    The method of Figures 7A to 7D is similar to the method of Figures 6A to 6D, and differs from the method of Figures 6A to 6D mainly in that, in the method of Figures 7A to 7D, the support substrates 601 and 603 of the method of FIGS. 6A to 6D are replaced by substrates 701 and 703 respectively. The substrates 701 and 703 differ from the substrates 601 and 603 in that they each comprise, on the side of their face intended to receive the microchips 200, cavities 702 (for the substrate 701),
    B15812 - DD17787 respectively 704 (for the substrate 703), intended to receive the microchips 200.
    More particularly, during the transfer of the microchips 200 from the initial support substrate 401 to the substrate 701 (FIG. 7A), each microchip 200 is placed in a cavity 702 of the substrate 701, and is separated from the other microchips 200 transferred to the substrate 701 by the side walls of the cavity 702. In other words, the pitch of the cavities 702 of the substrate 701 is substantially identical to the pitch of the microchips 200 on the substrate 401. In a similar manner to what has been described in relation to FIGS. 6A to 6D, the microchips 200 can be fixed to the temporary support substrate 701 by an adhesive layer, or can be simply placed on the substrate 701. The initial support substrate 401 is then removed.
    Furthermore, during the transfer of the microchips 200 from the temporary support substrate 701 to the support substrate 703 (FIG. 7B), each microchip 200 is placed in a cavity 704 of the substrate 703, and is separated from the other microchips 200 by the side walls. of the cavity 704. In other words, the pitch of the cavities 704 of the substrate 703 is substantially identical to the pitch of the microchips 200 on the initial substrate 401. In a similar manner to what has been described in relation to FIGS. 6A to 6D, the microchips 200 are simply placed on the support substrate
    703.
    The other steps of the method are identical or similar to what has been described previously in relation to FIGS. 6A to 6D.
    An advantage of the variant of FIGS. 7A to 7D is to facilitate the handling of the support substrates 701 and / or 703 once the latter have been loaded with microchips 200, by virtue of the lateral holding of the microchips obtained by predicting the cavities 702,
    704.
    Figure 8 is a sectional view illustrating an alternative embodiment of the method of Figures 7A to 7D.
    B15812 - DD17787
    FIG. 8 more particularly illustrates a final step of the method, corresponding to the step of FIG. 7D.
    In the variant of FIG. 8, the support substrate 703 of the method of FIGS. 7A to 7D is replaced by a support substrate 803. The substrate 803 comprises cavities 804 for holding the microchips 200, arranged in a pitch substantially equal to the pitch microchips on the initial support substrate 401. The substrate 803 of the method of FIG. 8 differs from the substrate 703 of the method of FIGS. 7A to 7D mainly in that the bottom of each cavity 804 of the substrate 803 is non-planar. In other words, unlike the substrate 703 in which the entire surface of a microchip 200 opposite the connection face of the microchip is in contact with the bottom of a cavity 704 of the substrate, in the example of FIG. 8 , for each microchip 200, only a part of the surface of the microchip opposite its connection face is in contact with the bottom of the cavity 804 in which the microchip is disposed. This makes it possible to prevent unwanted adhesion of the microchips 200 to the bottom of the cavities of the substrate 803, and thus to facilitate the removal of the microchips by the transfer substrate 250 during the self-assembly step.
    By way of example, the bottom of each cavity 804 of the substrate 803 may have a hollow shape, for example the shape of a portion of groove with a triangular section. More generally, any other non-planar shape suitable for obtaining the desired non-stick effect can be used, for example a domed shape.
    Particular embodiments have been described. Various variants and modifications will appear to those skilled in the art. In particular, the embodiments described are not limited to the specific examples of dimensions and materials mentioned in the description.
    In addition, it will be understood that the methods of FIGS. 4A to 4C, 5, 6A to 6D, 7A to 7D and 8 can be implemented with microchips 300 and / or with a transfer substrate 350 of the type described in relation to the figure 3.
    B15812 - DD17787
    Furthermore, although only examples of embodiments have been described in which the microchips transferred onto the transfer substrate each comprise an LED and an LED control circuit, the embodiments described are not limited to this case particular. Alternatively, each microchip may include a plurality of LEDs and an active circuit for controlling the plurality of LEDs. In addition, in another variant, each microchip can comprise only one or more LEDs, without a control circuit, the LED or LEDs of the microchip then being controlled by circuits external to the microchip, arranged for example at the periphery of the substrate of postponement.
    In addition, the embodiments described are not limited to the examples shown in which each microchip comprises four electrical connection areas.
    B15812 - DD17787
    权利要求:
    Claims (13)
    [1" id="c-fr-0001]
    1. Method for manufacturing an emissive LED display device, comprising the following steps:
    a) producing a plurality of chips (200; 300) each comprising at least one LED (110), and, on one connection face of the chip, a plurality of hydrophilic electrical connection pads (125, 126, 127, 128) and a hydrophobic zone (202), each electrical connection area of the chip being surrounded and separated from the other electrical connection areas of the chip by the hydrophobic area;
    b) producing a transfer substrate (250; 350) comprising, for each chip (200; 300), on a connection face of the transfer substrate, a plurality of hydrophilic electrical connection pads (155, 156, 157, 158) intended to be connected respectively to the electrical connection pads of the chip, and a hydrophobic zone (252), each electrical connection pad of the transfer substrate being surrounded and separated from the other electrical connection pads of the transfer substrate by the hydrophobic zone;
    c) placing a drop of a liquid (260) on each electrical connection area of the transfer substrate (250; 350) and / or on each electrical connection area of each chip (200; 300); and
    d) fix the chips (200; 300) to the transfer substrate (250; 350) by direct bonding so as to electrically connect the electrical connection pads of each chip to the corresponding electrical connection pads of the transfer substrate, using the capillary return force of the drops to align the electrical connection pads of the chips (200; 300) with the corresponding electrical connection pads of the transfer substrate (250; 350).
    [2" id="c-fr-0002]
    2. Method according to claim 1, in which the electrical connection areas (125, 126, 127, 128, 155, 156, 157, 158) of the chips (200; 300) and of the transfer substrate (250; 350) are made of metal, and in which the hydrophobic zones (202, 252)
    B15812 - DD17787 chips (200; 300) and the transfer substrate (250; 350) are made of a hydrophobic polymer.
    [3" id="c-fr-0003]
    3. Method according to claim 1 or 2, wherein the electrical connection pads (125, 126, 127, 128, 155, 156, 157, 158) of the chips (200; 300) are made of a material forming a drop angle less than 10 ° with the liquid (260), and wherein the hydrophobic zones (202; 252) are made of a material forming a drop angle greater than 20 ° with the liquid (260).
    [4" id="c-fr-0004]
    4. Method according to any one of claims 1 to 3, in which:
    in each chip (200), the connection face of the chip is planar, that is to say that the electrical connection pads (125, 126, 127, 128) of the chip are flush with the external face of the hydrophobic zone (202); and / or the connection face of the transfer substrate (250) is planar, that is to say that the electrical connection pads (155, 156, 157, 158) of the transfer substrate are flush with the external face of the hydrophobic zone (252).
    [5" id="c-fr-0005]
    5. Method according to any one of claims 1 to 3, in which:
    in each chip (300), the electrical connection pads (125, 126, 127, 128) of the chip form protrusions projecting from the connection face of the chip; and / or the electrical connection pads (155, 156, 157, 158) of the transfer substrate (350) form protrusions projecting from the connection face of the transfer substrate.
    [6" id="c-fr-0006]
    6. Method according to any one of claims 1 to 5, in which:
    at the end of step a), the chips (200; 300) are placed on a support substrate (401; 501; 603; 703; 803) with an inter-chip pitch less than the inter-chip pitch of the device final display; and in step d), several chips (200; 300) are selectively detached from the support substrate (401; 501; 603;
    B15812 - DD17787
    703; 803) at the pitch of the final display device and fixed to the transfer substrate at this same pitch.
    [7" id="c-fr-0007]
    7. The method of claim 6, wherein the selective detachment of the chips (200; 300) is achieved by means of a localized laser beam projected from the face of the support substrate (401) opposite the chips.
    [8" id="c-fr-0008]
    8. The method of claim 6, wherein the support substrate (501) has one or more through openings (503) facing each chip (200; 300), the selective detachment of the chips (200; 300) being achieved by through these openings.
    [9" id="c-fr-0009]
    9. Method according to claim 6, in which:
    at the end of step a), the chips (200; 300) are only placed, without gluing, on the support substrate (603; 703; 803); and in step d) the transfer substrate is brought above the chips (200; 300), connection side facing the connection faces of the chips, and placed on the chips so as to simultaneously take several chips in step of the final display device.
    [10" id="c-fr-0010]
    10. The method of claim 9, wherein the support substrate (703; 803) comprises cavities (704; 804) in which the chips are arranged (200; 300) so that the chips are held laterally by the walls of the cavities.
    [11" id="c-fr-0011]
    11. The method of claim 10, wherein the bottom of each cavity (804) of the support substrate (803) is non-planar.
    [12" id="c-fr-0012]
    12. Method according to any one of claims 1 to 11, wherein each chip (200; 300) comprises a stack of an LED (110) and an active circuit (120) for controlling the LED.
    [13" id="c-fr-0013]
    13. An emissive LED display device produced by a method according to any one of claims 1 to 12.
    B15812
    DD17787
    1/4
    100
    150.
    200
    110k
    120k
    125 (Vn) y 127 (Vsel) 128 (Vdata) 126 (Vp)
    155 (Vn) 7 157 (Vsel) 158 (Vdata) 156 (Vp)
    J 151
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    法律状态:
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    2018-10-19| PLSC| Search report ready|Effective date: 20181019 |
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    优先权:
    申请号 | 申请日 | 专利标题
    FR1753279A|FR3065321B1|2017-04-14|2017-04-14|METHOD FOR MANUFACTURING EMISSIVE LED DISPLAY DEVICE|
    FR1753279|2017-04-14|FR1753279A| FR3065321B1|2017-04-14|2017-04-14|METHOD FOR MANUFACTURING EMISSIVE LED DISPLAY DEVICE|
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    US15/949,184| US20180301433A1|2017-04-14|2018-04-10|Emissive led display device manufacturing method|
    CN201810336982.XA| CN108735863A|2017-04-14|2018-04-16|Emission type LED display manufacturing method|
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